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Components distribution in Cu(In,Ga)Se2 films prepared by selenization of evaporated metallic precursors on bare and ITO-coated glass substrates

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Abstract

Cu(In,Ga)Se2 thin films have been prepared by selenization of the evaporated metallic precursors on transparent and conductive ITO-coated as well as uncoated glass substrates, by starting from slightly Cu-rich or Cu-poor overall metallic proportions. The objective is to determine the influence of the Cu availability on the constituents distribution achieved after selenization, by means of data obtained at several film depths by grazing incidence X-ray diffraction and X-ray photoelectron spectroscopy that have been related to the overall optical and structural characteristics of the material. This study points out the possibility of achieving homogeneous or graded absorber layers, showing for homogeneous samples an ITO/Cu(In,Ga)Se2 interface with ohmic electrical characteristics suitable to act as back contact for semitransparent photovoltaic devices.

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Abbreviations

CIGS:

Copper indium gallium selenide

GIXRD:

Grazing incidence X-ray diffraction

ITO:

Indium tin oxide

SLG:

Soda lime glass

TCO:

Transparent conducting oxide

XPS:

X-ray photoelectron spectroscopy

XRD:

X-ray diffraction

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Acknowledgements

This study has been supported by the Spanish Ministry of Science and Innovation through the TEC2007-66506-C02-01/MIC project. The authors also thank J. Velázquez and I. Carabias (CAIS, UCM) and to C. Maffiotte (Dep. Tecnología, CIEMAT) for their assistance in the characterization measurements.

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  1. Departamento de Energía, CIEMAT, Avda. Complutense 22, Madrid, 28040, Spain

    C. Guillén & J. Herrero

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  1. C. Guillén
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  2. J. Herrero
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Correspondence to C. Guillén.

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Guillén, C., Herrero, J. Components distribution in Cu(In,Ga)Se2 films prepared by selenization of evaporated metallic precursors on bare and ITO-coated glass substrates. J Mater Sci 47, 1836–1842 (2012). https://doi.org/10.1007/s10853-011-5970-1

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