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Photovoltaic properties and photoconductivity in multilayer Ge/Si heterostructures with Ge nanoislands

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Abstract

Interband optical transitions in multilayer heterostructures with SiGe nanoislands were investigated using photocurrent spectroscopy and photo-emf. The n-p heterostructures containing Ge nanoislands in the area of the potential barrier were prepared by molecular-beam epitaxy at the temperature about 500 °C. It was shown that electron transitions from the ground state of the valence band in a nanoislands to the conduction band of Si surrounding made the main contribution into the vertical photo-emf in the range 0.75–1.05 eV, which is below the interband absorption edge of Si. The lateral photoconductivity observed in the range 0.63–0.8 eV at 77 K can be attributed to indirect interband transitions from the ground state of a nanoisland to L-state of the conduction band of a nanoisland. Analysis of Raman scattering spectra revealed that the Ge composition x in a nanoisland is about 0.87, while elastic deformation value amounts to εxx = −0.016. The calculated energies of interband transitions from the ground state of a nanoisland to the conduction band of Si surrounding (0.63 eV) and to L-state of the conduction band of a nanoisland (0.81 eV) fit the experimental data with a rather good accuracy.

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Acknowledgements

The research was implemented within the bilateral ÖAD Project UA No 2009/08 and supported by the program of fundamental research of the National Academy of Sciences of Ukraine “Nanostructured systems, nanomaterials, nanotechnologies” through the Project No9/07 and by the Ministry of Education and Science of Ukraine through Project NoM/34-09.

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Authors and Affiliations

  1. Physics Department, Kiev National Taras Shevchenko University, 2 Acad. Glushkov Ave, Kiev, 03022, Ukraine

    S. V. Kondratenko & O. V. Vakulenko

  2. O.O. Chuiko Institute of Surface Chemistry, 17 Generala Naumova Str, Kiev, 03164, Ukraine

    Yu. N. Kozyrev & M. Yu. Rubezhanska

  3. Institute of Physics, 46 Prospect Nauki, Kiev, 03028, Ukraine

    A. G. Naumovets

  4. Institute of Semiconductor Physics, 46 Prospect Nauki, Kiev, 03028, Ukraine

    A. S. Nikolenko, V. S. Lysenko & V. V. Strelchuk

  5. Institute of Physics, Montanuniversitaet Leoben, Franz Josef Str. 18, 8700, Leoben, Austria

    C. Teichert

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  1. S. V. Kondratenko
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  2. O. V. Vakulenko
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  3. Yu. N. Kozyrev
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  4. M. Yu. Rubezhanska
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  5. A. G. Naumovets
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  6. A. S. Nikolenko
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  7. V. S. Lysenko
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  8. V. V. Strelchuk
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  9. C. Teichert
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Correspondence to M. Yu. Rubezhanska.

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Kondratenko, S.V., Vakulenko, O.V., Kozyrev, Y.N. et al. Photovoltaic properties and photoconductivity in multilayer Ge/Si heterostructures with Ge nanoislands. J Mater Sci 46, 5737–5742 (2011). https://doi.org/10.1007/s10853-011-5528-2

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  • DOI: https://doi.org/10.1007/s10853-011-5528-2

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