Journal of Materials Science

, Volume 46, Issue 15, pp 5079–5084 | Cite as

Dielectric characteristic and local phase transition of gallium phosphide nanosolid

  • Zhao-Chun ZhangEmail author
  • Jian-Lin Li


The dependences of relative dielectric permittivity, ε′r, and tangent of dielectric loss angle, tg δ, of gallium phosphide (GaP) nanosolid on frequency and temperature were investigated. The GaP nanopowders are subglobular in shape, with the average crystallite size of about 50 nm evaluated from Scherrer equation. It can be concluded that the leakage current mechanism plays an important role in the dielectric loss of the GaP nanosolid. The dielectric characteristic of the GaP nanosolid in the range 298–350 K allows to detect an ε′r or tg δ peak at 303 K that is due to local phase transitions, probably in the high hydrostatic stress field of dislocations with an edge component. Under the influence of an electric field, the high hydrostatic stress field of dislocations can undergo changes in deformation, accompanied by drastic stress-induced changes in the order parameter near the phase transition temperature, and hence, changes in the Gibbs free energy per unit volume can be found.


Electron Spin Resonance Gibbs Free Energy Dielectric Permittivity Phase Transition Temperature External Electric Field 


  1. 1.
    Robert K, Ian H, Mark G (2007) Nanoscale science and technology (process block). Science Press, BeijingGoogle Scholar
  2. 2.
    Mohanty J, Hesjedal T, Ney A, Takagaki Y, Koch R, Däweritz L, Ploog KH (2003) Appl Phys Lett 83(14):2829CrossRefGoogle Scholar
  3. 3.
    Klimm D (1994) Phys Stat Sol (a) 143(2):305CrossRefGoogle Scholar
  4. 4.
    Klimm D, Klimm C, Banys J (1995) Phys Stat Sol (a) 148(2):K69CrossRefGoogle Scholar
  5. 5.
    Zhang Zh-Ch, Wang B-P (2009) Part Part Syst Char 26(1):53CrossRefGoogle Scholar
  6. 6.
    Barker AS Jr (1968) Phys Rev 165(3):917CrossRefGoogle Scholar
  7. 7.
    Zhang LD, Mou GM (2001) Nanomaterials and nanostrctures. Science Press, BeijingGoogle Scholar
  8. 8.
    Zhang ZZ, Zou LJ, Cui DL (2004) Mater Sci Eng B 111(1):5CrossRefGoogle Scholar
  9. 9.
    Li HL (1990) Introduction to dielectrics physics. Press of Chengdu University of Science and Technology, ChengduGoogle Scholar
  10. 10.
    Tareev B (1979) Physics of dielectric materials. Mir Publishers, MoscowGoogle Scholar
  11. 11.
    Nowick AS, Berry BS (1972) Anelastic relaxation in crystalline solids. Academic Press, New York/LondonGoogle Scholar
  12. 12.
    Stefaniak M, Alexander H (1991) Appl Phys A 53(1):62CrossRefGoogle Scholar
  13. 13.
    Hamilton B, Peaker AR, Pantelides S (1988) Phys Rev Lett 61(14):1627CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media, LLC 2011

Authors and Affiliations

  1. 1.School of Materials Science and EngineeringShanghai UniversityShanghaiChina

Personalised recommendations