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Solution for the critical thickness models of dislocation generation in epitaxial thin films using the Lambert W function

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Abstract

An exact analytical solution for the equilibrium critical thickness of misfit dislocation generation in epitaxial thins films is presented. The new expression is based on the use of the Lambert W function which eliminates the need of complex iterative computation. The comparison of proposed analytical solution versus misfit strain with the equilibrium critical thickness based on numerical solution proves its high accuracy.

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Authors and Affiliations

  1. Département de Physique, Faculté des Sciences de Monastir, Unité de Recherche de Physique des Solides, 5000, Monastir, Tunisia

    Chokri Hadj Belgacem & Mustapha Fnaiech

Authors
  1. Chokri Hadj Belgacem
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  2. Mustapha Fnaiech
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Correspondence to Chokri Hadj Belgacem.

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Hadj Belgacem, C., Fnaiech, M. Solution for the critical thickness models of dislocation generation in epitaxial thin films using the Lambert W function. J Mater Sci 46, 1913–1915 (2011). https://doi.org/10.1007/s10853-010-5026-y

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  • DOI: https://doi.org/10.1007/s10853-010-5026-y

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