Temperature-dependent barrier height in CdSe Schottky diode

Abstract

This article reports the measurements of temperature-dependent barrier height (BH) of CdSe Schottky diodes. These diodes have been made by thermal evaporation technique on ITO glass and glass substrates at room temperature. The XRD measurements have been made and the average particle size has been calculated which comes out to be ~20 nm. The Au dots have been made for non-ohmic contacts. I–V characteristics have been measured at different temperatures (280–330 K). These characteristics obey the thermionic emission theory. The BH decreases and ideality factor increases with the increase in temperature. Richardson’s plot has been made and Richardson’s constant has been calculated which is less than the expected value. Capacitance measurements have been done at different frequencies and the interface states have been calculated. The results have been explained on the basis of BH inhomogeneities.