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Effects of Ga content on thermoelectric properties of P-type Ba8Ga16+xZn3Ge27−x type-I clathrates

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Abstract

P-type Ba8Ga16+xZn3Ge27−x (x = 0.1, 0.2, 0.3, and 0.4) type-I clathrates were synthesized by combining solid-state reaction with spark plasma sintering (SPS) technology. The effects of slight increase of Ga content on thermoelectric properties have been investigated. The results show that at room temperature the carrier concentration Np of p-type Ba8Ga16+xZn3Ge27−x clathrates increases remarkably compared with that of Ba8Ga16Zn3Ge27 compound, which results in the increases of electrical conductivity although carrier mobility μH slightly decreases. The thermal conductivity κ of all samples increases with the increase of Ga content. Ba8Ga16.2Zn3Ge26.8 compound exhibits the highest ZT value of 0.43 at 700 K, which is increased by 13% compared with that of Ba8Ga16Zn3Ge27 compound.

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Acknowledgement

This work is sponsored by the National Basic Research Program of China (Grant Nos. 2007CB607501 and 2007CB607503) and Yunnan Natural Science Fund (Grand No. 2008CD114).

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Authors and Affiliations

  1. Education Ministry Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology, Yunnan Normal University, Kunming, 650092, China

    Shu-kang Deng, Pei-zhi Yang & Ming Li

  2. State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070, China

    Xin-feng Tang

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  1. Shu-kang Deng
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  2. Xin-feng Tang
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Correspondence to Shu-kang Deng.

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Deng, Sk., Tang, Xf., Yang, Pz. et al. Effects of Ga content on thermoelectric properties of P-type Ba8Ga16+xZn3Ge27−x type-I clathrates. J Mater Sci 44, 939–944 (2009). https://doi.org/10.1007/s10853-008-3205-x

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  • DOI: https://doi.org/10.1007/s10853-008-3205-x

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