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Effects of oxygen pressure on the structure and photoluminescence of ZnO thin films

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Abstract

A series of ZnO thin films were deposited on silicon (100) substrate at 473 K by using facing target RF magnetron sputtering system at different oxygen pressure in this paper. The structure, surface morphology and photoluminescence of the ZnO thin films were characterized by X-ray diffraction, atomic force microscopy (AFM), and photoluminescence spectra (PL), respectively. The results showed that only a (002) peak of hexagonal wurtzite appeared in all ZnO thin films, indicating that ZnO films exhibited strong texture. With increasing the oxygen pressure, the results indicated that the ZnO film deposited at 1.2 Pa Ar pressure and 0.6 Pa oxygen pressure had the best preferential C-axis orientation and the weakest compressive stress. Meanwhile, AFM observation showed that ZnO film deposited at pure Ar had the highest surface roughness. With the increment of oxygen pressure, the surface roughness decreased gradually. In addition, PL measurement showed that the ZnO film deposited at 1.2 Pa Ar pressure and 0.6 Pa oxygen pressure had the strongest ultraviolet emission and the weakest blue emission.

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Acknowledgements

This work was supported by the National Natural Science Foundation of Shandong Province of China (No. 2005ZX11 and No. Y2006A02).

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Authors and Affiliations

  1. School of Physics Science and Information Engineering, Liaocheng University, Liaocheng, 252059, Shandong Province, P.R. China

    Changzheng Wang, Dongran Xu, Xiaoguang Xiao, Yiqing Zhang & Dong Zhang

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  1. Changzheng Wang
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  2. Dongran Xu
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  3. Xiaoguang Xiao
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  4. Yiqing Zhang
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  5. Dong Zhang
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Correspondence to Changzheng Wang.

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Wang, C., Xu, D., Xiao, X. et al. Effects of oxygen pressure on the structure and photoluminescence of ZnO thin films. J Mater Sci 42, 9795–9800 (2007). https://doi.org/10.1007/s10853-007-1992-0

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  • DOI: https://doi.org/10.1007/s10853-007-1992-0

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