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Structural and dielectric properties of Bi doped Ba0.6Sr0.4TiO3 ceramics

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Abstract

The dielectric properties of 0.1–15% mol bismuth doped Ba0.6Sr0.4TiO3 (BST) ceramics have been investigated systematically. The solubility limit of bismuth is determined as about 10 mol% by means of both X-ray diffraction and scanning electron microscopy, which is further verified by the fact that the lattice constant of the samples above 10 mol% is almost invariable. The temperature dependence of the dielectric permittivity suggest that the ferroelectric behavior transit to relaxor ferroelectric type when impurity concentration reaches 5 mol%, and further to relaxor behavior for samples above 10 mol% Bi content, which is verified by the absence of a hysteresis loop. Thermal expansion results show differences between 5 and 10 mol% doped samples. Dielectric tunability at room temperature decreases with bismuth content increasing. The variation of properties was attributed to the impurity induced polar regions and former long-order structure.

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Acknowledgements

This work was supported by the Ministry of Science and Technology of China through the 973 project under Grant No. 2002CB613304 and NSFC under Grant No. 50402015.

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Authors and Affiliations

  1. Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Xi’an Jiaotong University, Xi’an, 710049, P.R. China

    Wei Chen, Xi Yao & Xiaoyong Wei

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  1. Wei Chen
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  2. Xi Yao
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  3. Xiaoyong Wei
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Correspondence to Wei Chen.

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Chen, W., Yao, X. & Wei, X. Structural and dielectric properties of Bi doped Ba0.6Sr0.4TiO3 ceramics. J Mater Sci 43, 1144–1150 (2008). https://doi.org/10.1007/s10853-007-1965-3

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  • DOI: https://doi.org/10.1007/s10853-007-1965-3

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