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The electronic band structure of InN, InAs and InSb compounds

Abstract

The electronic band structure of InN, InAs and InSb has been investigated by ETB. The ETB method has been formulated for sp3d2 basis and nearest neighbor interactions of the compounds and its energy parameters have been derived from the results of the present first principles calculations carried on InN, InAs and InSb. It has been found that the present ETB parameters can produce the band structure of the compounds successfully.

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Correspondence to Şenay Katırcıoğlu.

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Mohammad, R., Katırcıoğlu, Ş. & El-Hasan, M. The electronic band structure of InN, InAs and InSb compounds. J Mater Sci 43, 2935–2946 (2008). https://doi.org/10.1007/s10853-007-1794-4

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  • DOI: https://doi.org/10.1007/s10853-007-1794-4

Keywords

  • Band Structure
  • InSb
  • Full Potential Linearize Augmented Plane Wave
  • Conduction Band State
  • Valence Band Structure