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Physical origin of spontaneous interfacial alloying in immiscible W/Cu multilayers

Abstract

A metastable solid solution has been observed in immiscible W/Cu multilayers sputter deposited with very low period (≤3 nm). A recent model evidencing size dependence of surface energies and diffusion coefficients in bilayers may explain the observed trends since diffusion coefficients highly increase when layer thickness decreases. Furthermore, implantation effects of the energetic incoming atoms during layer deposition undoubtedly reinforce these mixing phenomena.

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Acknowledgements

The French authors would like to thank M. Piellard for SEM observations and T. Girardeau for EXAFS experiments and analysis. G. Ouyang and G.W. Yang would like to thank the National Science Foundation of the People’s Republic of China (90306006) and Natural Science Foundation of Guangdong province (01009737) for support of this work.

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Correspondence to Pascale Villain.

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Villain, P., Goudeau, P., Badawi, F. et al. Physical origin of spontaneous interfacial alloying in immiscible W/Cu multilayers. J Mater Sci 42, 7446–7450 (2007). https://doi.org/10.1007/s10853-007-1605-y

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  • DOI: https://doi.org/10.1007/s10853-007-1605-y

Keywords

  • Tungsten
  • Position Sensitive Detector
  • Sublayer Thickness
  • Tungsten Layer
  • Copper Thickness