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Dynamics and characters of dislocations in ZnSe

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The mechanical strength of single-crystal ZnSe is investigated at elevated temperatures by means of compressive deformation. The yield stress of ZnSe in the temperature range 150–300°C is around 7–13 MPa, easily deformed even at low temperature. From the temperature dependence of the yield stress an activation energy for dislocation motion in the ZnSe is deduced to be 0.5–0.7 eV. The stacking fault energy is estimated to be 7–9 mJ/m2 from the dissociation width of dislocations into partials.

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Authors and Affiliations

  1. Institute for Materials Research, Tohoku University, Sendai, 980-8577, Japan

    I. Yonenaga, K. Watanabe & S. Itoh

  2. Sumitomo Electric Industries, Semiconductor R & D Laboratories, Itami, 664-0016, Japan

    S. Fujiwara

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  1. I. Yonenaga
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  2. K. Watanabe
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  3. S. Itoh
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  4. S. Fujiwara
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Correspondence to I. Yonenaga.

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Yonenaga, I., Watanabe, K., Itoh, S. et al. Dynamics and characters of dislocations in ZnSe. J Mater Sci 41, 2601–2604 (2006). https://doi.org/10.1007/s10853-006-7817-8

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  • DOI: https://doi.org/10.1007/s10853-006-7817-8

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