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Influence of the annealing temperature on violet emission of ZnO films obtained by oxidation of Zn film on quartz glass

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Abstract

The photoluminescence (PL) emission properties of ZnO films obtained on quartz glass substrate by the oxidation of Zn films with the oxygen pressure of 50Pa at temperature of 773 K~973 K were studied. The strong single violet emission centering on 424 nm (or 2.90 eV) without any accompanying deep-level emission and UV emission was observed in the PL spectra of the ZnO films at room temperature. The intensity of violet emission increased with increasing annealing temperature in the range of 773 K~873 K and decreased with increasing annealing temperature in the range of 873 K~973 K. These violet emission bands are attributed to the electron transition from interstitial zinc (Zni) level (2.91 eV) to the valence band.

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Authors and Affiliations

  1. The Key Lab of Automobile Materials, Ministry of Education, College of Materials Science and Engineering, Jilin University, Changchun, 130025, China

    X. M. Fan, J. S. Lian, Z. X. Guo, L. Zhao & Q. Jiang

  2. College of Materials Engineering, Southwest Jiaotong University, Chengdu, Sichuan, 610031, China

    X. M. Fan

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  1. X. M. Fan
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  2. J. S. Lian
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  3. Z. X. Guo
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  4. L. Zhao
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  5. Q. Jiang
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Correspondence to J. S. Lian.

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Fan, X.M., Lian, J.S., Guo, Z.X. et al. Influence of the annealing temperature on violet emission of ZnO films obtained by oxidation of Zn film on quartz glass. J Mater Sci 41, 2237–2241 (2006). https://doi.org/10.1007/s10853-006-7177-4

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  • DOI: https://doi.org/10.1007/s10853-006-7177-4

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