Abstract
In this paper we present an overview of the deep states present after ion-implantation by various species into n-type silicon, measured by Deep Level Transient Spectroscopy (DLTS) and high resolution Laplace DLTS (LDLTS). Both point and small extended defects are found, prior to any anneal, which can therefore be the precursors to more detrimental defects such as end of range loops. We show that the ion mass is linked to the concentrations of defects that are observed, and the presence of small interstitial clusters directly after ion implantation is established by comparing their behaviour with that of electrically active stacking faults. Finally, future applications of the LDLTS technique to ion-implanted regions in Si-based devices are outlined.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
G. MANNINO, N. E. B. COWERN, F. ROOZEBOOM and J. G. M. VAN BERKUM, Appl. Phys. Lett. 76 (2000) 855.
S. LIBERTINO, S. COFFAS and J. L. BENTON, Phys. Rev. B 63 (2001) 195206.
B.G. SVENSSON, C. JAGADISH, A. HALLEN and J. LALITA, ibid. 55 (1997) 10498.
P. PELLEGRINO, N. KESKITALO, A. HALLEN and B. G. SVENSSON, Nucl. Instr. Meth. B 148 (1999) 306.
N. ABDELGADER and J. H. EVANS-FREEMAN, J. Appl. Phys. 93 (2003) 5118.
H. A. W. EL MUBAREK, J. M. BONAR, G. D. DILLIWAY, P. ASHBURN, M. KARUNARATNE, A. F. WILLOUGHBY, Y. WANG, P. L. F. HEMMENT, R. PRICE, J. ZHANG and P. WARD, ibid. 96 (2004) 4114.
G. D. WATKINS and J. W. CORBETT, Phys. Rev. 138 (1965) A543.
M. T. ASOM, J. L. BENTON, R. SAUER and L. C. KIMERLING, Appl. Phys. Lett. 51 (1987) 256.
J. LALITA, B. G. SVENSSON, C. JAGADISH and A. HALLEN, Nucl. Instr. and Meth. B 127/128 (1997) 69.
J. H. EVANS-FREEMAN, P. Y. Y. KAN and N. ABDULGADER, J. Appl. Phys. 92 (2002) 3755.
P. R. WILSHAW and G. R. BOOKER, in “Proceedings of the Microscopical Society Conference” (1985) 329.
Y. QIAN, J. H. EVANS and A. R. PEAKER, Inst. Phys. Conf. Ser. No. 134 (1993) 121.
L. DOBACZEWSKI, P. KACZOR, I. HAWKINS and A. R. PEAKER, J. Appl. Phys. 76 (1994) 194.
J. F. ZIEGLER, J. P. BIERSACK and U. LITTMARK, in “The Stopping and Range of Ions in Solids” Pergamon, New York, 1985; http://www.srim.org/
A. OURMAZD, P. R. WILSHAW and G. R. BOOKER, Physica B 116 (1983) 600.
K. H. YANG, J. Electrochem. Soc. 131 (1984) 1140.
D. V. LANG, J. Appl. Phys. 45 (1974) 3023.
P. PELLEGRINO, P. LEVEQUE, J. WONG-LEUNG, C. JAGADISH and B. G. SVENSSON, Appl. Phys. Lett. 78 (2001) 3442.
M. A. LOURENCO, M. S. A. SIDDIQUI, G. SHAO, R. M. GWILLIAM and K. P. HOMEWOOD, Phys. Stat. Sol. A 201 (2004) 239.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Evans-Freeman, J.H., Emiroglu, D., Gad, M.A. et al. Deep electronic states in ion-implanted Si. J Mater Sci 41, 1007–1012 (2006). https://doi.org/10.1007/s10853-006-6597-5
Issue Date:
DOI: https://doi.org/10.1007/s10853-006-6597-5