Abstract
Sandwich structures of Carbazole thin films have been prepared by using vacuum deposition technique. The plot of current density versus voltage (J–V characteristics) shows two distinct regions. In the lower voltage region ohmic conduction and in the higher voltage region space charge limited conduction (SCLC) is observed. Number of states in the valence band (Nv) is calculated from the temperature dependence of J in the ohmic region. From the temperature dependence of J in the SCLC region trap density (Nt) and activation energy are determined. The values of Nv and Nt are in the order 1023 m−3 and 1027 m−3 respectively. The value of activation energy is nearly equal to 0.1 eV and that of the effective mobility is 4.5 × 10−7 cm2 V−1 S−1. Schottky diodes are fabricated using Aluminium (Al) as Schottky contact. It is observed that gold (Au) is more suitable for ohmic contact compared to silver (Ag). From a semi logarithmic plot of J versus V, the barrier height (ϕb), diode ideality factor (n) and saturation current density (J0) are determined. The value of n increases and ϕb decreases on annealing.
Similar content being viewed by others
References
J. SWORAKOWSKI and J. ULANSKI, Annu. Rep. Prog. Chem Sect. C 99 (2003) 87.
G. WANG, C. YAN, H. WU and Y. WEI, J. Appl.Phys. 78 (1995) 2679.
B. HU, Z. YANG and F. E. KRASZ, ibid. 76 (1994) 2419.
C. ZHANG, H. VON. SEGGEM, K. PAKBAZ, B. KRAABEL, H. W. SCHIMIDT and H. J. HEEGER, Synth. Met. 62 (1994) 35.
K. D. ALMEIDA, J. C. BERNEDE, S. MARSILLAC, A. GODOY and F. R. DIAZ, Synth. Met. 122 (2001) 127.
J. LIU, R. GUO and Y. YANG, J. Appl. Phys. 91 (2002) 1595.
L. I. MAISSEL and R. GLANG, “Hand Book of Thin Film Technology” (Mc Graw Hill, New York, 1983) pp. 11.
M. A. LAMPET, Rep. Phys. 27 (1964) 329.
E. GAUTIER-THIANCHE, C. SENTEIN, A. LORIN, C. DENIS, P. RAIMOND and J.-M. NUNZI, J. Appl. Phys. 83 (1998) 4236.
R. CLERGERAUX, I. SEGUY, P. JOLINAT, J. FARENC and P. DESTRUEL, J. Phys. D. Appl. Phys. 33 (2000) 1947.
K. N. NARAYANAN UNNI and C. S. MENON, Indian Journal of Pure and Applied Physics. 39(2001) 156.
V. N. SAVVATEEV, M. TARABIA, H. CHAYET, E. Z. FARRAGI, G. B. CHOHEN, S. KRISTEIN, D. DAVIDO, Y. AVNY, and R. NEUMANN, Synth. Met. 85 (1997) 1269.
S. M. SZE, “Physics of Semiconductor Devices” (Eastern Wiley, New Delhi, 1981) pp 637.
N. BOWDEN, S. BRITTAIN, A. G. EVAS, J. W. HUTCHINSON and G. M. WHITESIDES, Nature 93 (1998) 146.
J. KIM and H. H. LEE, J. Polym.Sci. Part-B: Polym. Phys. 39 (2001) 1122.
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Pisharady, S.K., Menon, C.S. & Sudarshanakumar, C. Electrical properties of Schottky diodes based on Carbazole. J Mater Sci 41, 2417–2421 (2006). https://doi.org/10.1007/s10853-006-5078-1
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10853-006-5078-1