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Systematic study on the influence of growth parameters on island density exponent, size distribution and scaling behaviour

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Abstract

We present the Monte Carlo simulation of submonolayer film growth during molecular beam epitaxy (MBE) at low temperature. We have made systematic study to see how the parameters diffusion to flux ratio (D/F), diffusional anisotropy (DA) and sticking anisotropy influences on island density exponent (χ), size distribution and scaling behaviour. We have found that, as diffusional anisotropy changes from DA = 1 to DA = ∝, the density exponent changes from χ = 0.34 ± 0.01 to 0.28 ± 0.01 for isotropic sticking case but when sticking is anisotropic the density exponent changes from χ = 0.31 ± 0.01 to 0.24 ± 0.01. The influence produced by DA on island size distribution is observed to depend on D/F ratio and sticking anisotropy. Depending on DA values and D/F ratio, the size distribution is also observed to be insensitive to the change in diffusional anisotropy. We also study the influence of diffusional anisotropy on scaling function for two sticking anisotropy condition. The scaling behaviour of island size distribution is observed to be not affected by all diffusional anisotropy as well as sticking anisotropy condition.

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References

  1. Brune H (1998) Surf Sci Rep 31:121

    Article  CAS  Google Scholar 

  2. Ratsch C, Gyure MM, Chen S, Kang M, Vvedensky DD (2000) Phys Rev B 61:10598

    Article  Google Scholar 

  3. Mortensen JJ, Linderoth TR, Jacobsen KW, Laegsgaard E, Stensgaard I, Besenbacher F (1998) Surf Sci 400:290

    Article  CAS  Google Scholar 

  4. Brune H, Bales GS, Jacobson J, Boragno C, Kern K (1999) Phys Rev B 60:5991

    Article  CAS  Google Scholar 

  5. Mo YW, Kleiner J, Webb MB, Lagally MG (1991) Phys Rev Lett 66:1998; Mo YW, Kleiner J, Webb MB, Lagally MG (1992) Surf Sci 268: 275

  6. Tantaru O, Family F (2000) Phys Rev B 62:13129

    Article  Google Scholar 

  7. Stroscio JA, Pierce DT (1994) Phys Rev B 49:8522; Stroscio JA, Pierce DT, Dragoset RA (1993) Phys Rev Lett 70:3615

  8. Somfai E, Wolf DE, Kertesz J (1996) J Phys I 6:393

    Google Scholar 

  9. Bales GS, Chrzan DC (1994) Phys Rev B 50:6057

    Article  CAS  Google Scholar 

  10. Lee SB, Gupta BC (2000) Phys Rev B 62:7545; Lee SB (2006) Phys Rev B 73: 035437; Lee SB, Hwangbo T (2004) Physica A 337:470

  11. Blackman JA, Mulheran PA (2001) Comp Phys Commun 137:195

    Article  CAS  Google Scholar 

  12. Smilauer P, Wilby MR, Vvedensky DD (1993) Phys Rev B 47:4119

    Article  CAS  Google Scholar 

  13. Bartelt MC, Evans JW (1992) Phys Rev B 46:12675; Bartelt MC, Evans JW (1993) Surf Sci 298:421

  14. Amar JG, Family F, Lam P (1994) Phys Rev B 50:8781; Amar JG, Family F (1995) Phys Rev Lett 74:2066

  15. Linderoth TR, Mortensen JJ, Jacobsen KW, Laegsgaard E, Stensgaard I, Besenbacher F (1996) Phys Rev Lett 77:87

    Article  CAS  Google Scholar 

  16. Brune H, Roder H, Boragno C, Kern K (1994) Phys Rev Lett 73:1955

    Article  CAS  Google Scholar 

  17. Muller B, Nedelmann L, Fischer B, Brune H, Kern K (1994) Phys Rev B 54:17858

    Article  Google Scholar 

  18. Yang H, Labella VP, Bullock DW, Ding Z, Smathers JB, Thibado PM (1994) J Crystal Growth 201:88

    Google Scholar 

  19. Kasu M, Kobayashi N (1994) J Crystal Growth 170:246

    Article  Google Scholar 

  20. Labella VP, Bullock DW, Ding Z, Emery C, Harter WG, Thibado PM (2000) J Vac Sci Technol A 18:1526

    Article  CAS  Google Scholar 

  21. Iguain JL, Martin HO, Aldao CM (1999) Phys Rev B 59:4596

    Article  CAS  Google Scholar 

  22. Mazzitello KI, Iguain JL, Martin HO (1999) J Phys A: Math Gen 32:4389

    Article  Google Scholar 

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Acknowledgements

One of the authors S.P. Shrestha gratefully acknowledges the support from Swedish International Development Corporation Agency (SIDA) and The Abdus Salam International Center For Theoretical Physics (ICTP) under regular associate scheme.

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Correspondence to Shankar Prasad Shrestha.

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Shrestha, S.P., Park, CY. Systematic study on the influence of growth parameters on island density exponent, size distribution and scaling behaviour. J Mater Sci 42, 6762–6768 (2007). https://doi.org/10.1007/s10853-006-1461-1

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