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Effects of hydrogenation and aging on the optical properties in porous Si layers

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Abstract

The effects of hydrogenation and aging on the optical properties in porous Si (PS) layers were investigated by using photoluminescence (PL) measurements. When the hydrogenated PS layers were aged in air, the intensity of the PL spectrum increased. The emission peak for the hydrogenated PS layers shifted to higher energy with decreasing H2/N2 ratio. The relation of the dehydrogenized states in the as-formed PS surface to the quantum states of Si nanoparticles with relatively small sizes is discussed. These results indicate that the optical properties of PS layers are significantly affected by hydrogenation and aging.

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Acknowledgements

The work at KIST was supported by KIST contract 2E18540, and the work at Hanyang University was supported by the Korea Science and Engineering Foundation through the Quantum-functional Semiconductor Research Center at Dongguk University.

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  1. Do-Hyun Oh

    Present address: Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul, 133-791, Korea

Authors and Affiliations

  1. Nano Device Research Center, Korea Institute of Science & Technology, Seoul, 136-791, Korea

    Do-Hyun Oh, Soojin Lee & Woon-Jo Cho

  2. Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul, 133-791, Korea

    Tae Whan Kim

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  1. Do-Hyun Oh
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  2. Soojin Lee
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Correspondence to Tae Whan Kim.

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Oh, DH., Lee, S., Cho, WJ. et al. Effects of hydrogenation and aging on the optical properties in porous Si layers. J Mater Sci 42, 6862–6865 (2007). https://doi.org/10.1007/s10853-006-1306-y

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  • DOI: https://doi.org/10.1007/s10853-006-1306-y

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