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Stress-impedance effects in sandwiched FeCuNbCrSiB/Cu/FeCuNbCrSiB films fabricated by Microelectromechanical Systems technique

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Abstract

Sandwiched FeCuNbCrSiB/Cu/FeCuNbCrSiB films with a serpentine structure have been realized on silicon cantilever by Microelectromechanical Systems technique, and the stress-impedance (SI) effects have been studied in the frequency range of 1–40 MHz. Experimental results show that the values of SI ratio increase with the deflection and a large SI ratio of −24.1% at 5 MHz with the average tension stress 69.9 MPa and strain 0.048% is obtained in the sandwiched FeCuNbCrSiB/Cu/FeCuNbCrSiB films, which shows attractive for the applications of strain sensors.

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Acknowledgement

This work was supported by the National Natural Science Foundation of China under Grant No. 50275096 and No. 10402023, and partly supported by the Nanometer technology Program of Science & Technology Committee of Shanghai (0652nm004) and by the National High Technology Research and Development Program (2006AA03Z301).

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Authors and Affiliations

  1. National Key Laboratory of Nano/Micro Fabrication Technology, Key Laboratory for Thin Film and Microfabrication of Ministry of Education, Institute of Micro and Nano Science and Technology, Shanghai Jiaotong University, Shanghai, 200030, China

    Zhimin Zhou, Ying Cao, Yong Zhou, Ji-An Chen & Wen Ding

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  1. Zhimin Zhou
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  2. Ying Cao
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  3. Yong Zhou
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  4. Ji-An Chen
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  5. Wen Ding
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Correspondence to Yong Zhou.

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Zhou, Z., Cao, Y., Zhou, Y. et al. Stress-impedance effects in sandwiched FeCuNbCrSiB/Cu/FeCuNbCrSiB films fabricated by Microelectromechanical Systems technique. J Mater Sci 42, 2450–2454 (2007). https://doi.org/10.1007/s10853-006-1269-z

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  • DOI: https://doi.org/10.1007/s10853-006-1269-z

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