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The influence of diluent gas composition and temperature on SiC nanopowder formation by CVD

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Abstract

Crystalline cubic silicon carbide (3C-SiC) nanopowders were synthesized using hexamethyldisilane (HMDS) in a resistance heated chemical vapour deposition (CVD) reactor. The effects of different diluent gases on the synthesis of the SiC powder were also studied. The deposited powder was characterized using high-resolution X-ray diffraction (HRXRD) analysis, transmission electron microscopy (TEM), high-resolution TEM (HRTEM) and BET surface area measurements. The crystallite size was estimated to be in the range of nanometer (10–20 nm) from XRD data and the particle size (∼10–30 nm) was obtained by TEM, HRTEM and BET. The growth condition was optimized in terms of crystallinity, chemical composition and deposition rate by varying different parameters such as the diluent gas (H2/Ar ratio) and temperature.

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Acknowledgements

We are grateful for the support provided by DRDO, India. A. Gupta also thanks the CSIR for the award of senior research fellowship.

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Authors and Affiliations

  1. Materials Science Centre, Indian Institute of Technology, Kharagpur, 721302, India

    Aparna Gupta & Chacko Jacob

  2. Department of Electrical Engineering, Indian Institute of Technology, Kharagpur, 721302, India

    Tridib Ghosh

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  1. Aparna Gupta
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  2. Tridib Ghosh
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  3. Chacko Jacob
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Correspondence to Chacko Jacob.

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Gupta, A., Ghosh, T. & Jacob, C. The influence of diluent gas composition and temperature on SiC nanopowder formation by CVD. J Mater Sci 42, 5142–5146 (2007). https://doi.org/10.1007/s10853-006-1267-1

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  • DOI: https://doi.org/10.1007/s10853-006-1267-1

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