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Chemical beam epitaxial growth of GaInP using uncracked trisdimethylaminophosphine

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Abstract

Gallium indium phosphide (Ga x In1−x P) epitaxial layers were grown on GaAs substrates by chemical beam epitaxy (CBE) without thermally precracking the group V precursor. Trisdimethylaminophosphine (TDMAP), triisopropylgallium (TIPGa), and ethyldimethylindium (EDMIn) were used as the phosphorus, gallium and indium sources, respectively. Ga x In1−x P was grown without group V precracking for substrate temperatures in the range of 400–520 °C. Above 500 °C, the epilayers had a hazy appearance presumably due to being phosphorus deficit. A strong solid composition dependence on substrate temperature was observed. The samples were In-rich at low growth temperatures and Ga-rich at high growth temperatures. It was possible to grow the Ga x In1−x P epilayers over a large composition range with good morphology and strong photoluminescence. Values of full width at half maximum were as low as 45 meV at 14 K photoluminescence measurements.

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Authors and Affiliations

  1. Center for Nano Manufacturing, School of Nano Engineering, Inje University, Obang-Dong, Gimhae-Shi, Gyongnam, 621-749, Korea

    H. H. Ryu, M. H. Jeon, J. Y. Leem & H. J. Song

  2. Department of Electrical and Computer Engineering, The University of Utah, Salt Lake City, UT, 84112, USA

    L. P. Sadwick

  3. Department of Material Science & Engineering, The University of Utah, Salt Lake City, UT, 84112, USA

    G. B. Stringfellow

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  1. H. H. Ryu
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  2. M. H. Jeon
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  4. H. J. Song
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Ryu, H.H., Jeon, M.H., Leem, J.Y. et al. Chemical beam epitaxial growth of GaInP using uncracked trisdimethylaminophosphine. J Mater Sci 41, 8265–8270 (2006). https://doi.org/10.1007/s10853-006-0998-3

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  • DOI: https://doi.org/10.1007/s10853-006-0998-3

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