Journal of Materials Science

, Volume 42, Issue 14, pp 5312–5317 | Cite as

The structural deformations in the Si/SiGe system induced by thermal annealing

  • Shuqi ZhengEmail author
  • M. Mori
  • T. Tambo
  • C. Tatsuyama


The structural deformations in Si/SiGe system during thermal annealing were investigated by means of atomic force microscope (AFM) and high-resolution X-ray diffraction (HRXRD). The (004) rocking curve measurements showed that the obvious fringes of rocking curve obtained from pre-annealing sample were faded out gradually and disappeared completely with increasing the annealing temperature, which indicated that the abrupt Si/SiGe interface was destroyed gradually. The analyses of the peak broadening and relative position of the SiGe epilayer with respect to the Si substrate in high-resolution reciprocal space map (HRRSM) measurements described clearly the formation of mosaic structure in Si/SiGe system. The inner deformation induced the surface corrugate, known as crosshatch morphologies, which was analyzed by AFM measurements.


Atomic Force Microscope Image Structural Deformation Misfit Dislocation Strain Relaxation Mosaic Structure 


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Copyright information

© Springer Science+Business Media, LLC 2007

Authors and Affiliations

  1. 1.Department of Materials Science and EngineeringChina University of Petroleum BeijingBeijingChina
  2. 2.Department of Electrical and Electronic Engineering, Faculty of EngineeringToyama UniversityToyamaJapan

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