Journal of Materials Science

, Volume 42, Issue 13, pp 4845–4849 | Cite as

Dependence of the resistivity and the transmittance of sputter-deposited Ga-doped ZnO films on oxygen partial pressure and sputtering temperature

  • Sookjoo Kim
  • Wan In Lee
  • El-Hang Lee
  • S. K. Hwang
  • Chongmu LeeEmail author


Ga-doped ZnO (GZO) thin films were prepared by rf magnetron sputtering and dependence of the electrical resistivity and the transmittance of the GZO films on the oxygen partial pressure (R = the O2/Ar gas flow ratio) and the substrate temperature were investigated. The resistivity of the GZO film decreases first and then increases with an increase in the substrate temperature (T). A minimum resistivity obtained with a substrate temperature of 300 °C is 3.3 × 10−4 Ωcm. The resistivity nearly does not change with R for R < 0.25. The decrease in the resistivity for R < 0.25 is attributed to enhancement in crystallinity, whereas the increase in the resistivity for R > 0.25 to precipitation of gallium oxides at grain boundaries. Optical transmittance of the GZO films is enhanced by increasing R up to 0.75. This enhancement in the transmittance is due to a decrease in oxygen vacancy concentration and a decrease in surface roughness with R.


Electrical Resistivity Substrate Temperature Carrier Concentration Oxygen Partial Pressure Gallium Oxide 
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This work was supported by KOSEF through OPERA (R11-2003-022).


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Copyright information

© Springer Science+Business Media, LLC 2007

Authors and Affiliations

  • Sookjoo Kim
    • 1
  • Wan In Lee
    • 2
  • El-Hang Lee
    • 3
  • S. K. Hwang
    • 1
  • Chongmu Lee
    • 1
    Email author
  1. 1.Department of Materials Science and EngineeringInha UniversityIncheonKorea
  2. 2.Department of ChemistryInha UniversityIncheonKorea
  3. 3.OPERAInha UniversityIncheonKorea

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