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Influence of graded interfaces on the exciton energy of type-I and type-II Si/Si1-x Gex quantum wires

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Abstract

The exciton properties of Si/Si 1-x Ge x cylindrical quantum wires (QWRs) are calculated using the variational method and taking into account the existence of an interface layer between the materials. We consider two possibilities for the conduction band lineup, type-I and type-II. Our numerical results show that an interfacial fluctuation of 15Å in a Si 0.85 Ge 0.15 (Si0.70Ge0.30) type-I (type-II) wire of 50Å wire radius leads to an exciton energy blue shift of the order of 10 (10) meV.

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Acknowledgements

This work has received financial support from the Brazilian National Research Council (CNPq) and Funcap.

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Authors and Affiliations

  1. Universidade Federal do Ceará, Fortaleza, Ceará, Brazil

    Andrey Chaves, Jusciane da Costa e Silva, José Alexander de King Freire, Marcos Henrique Degani, Valder Nogueira Freire & Gil de Aquino Farias

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  1. Andrey Chaves
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  2. Jusciane da Costa e Silva
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  3. José Alexander de King Freire
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  4. Marcos Henrique Degani
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  5. Valder Nogueira Freire
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  6. Gil de Aquino Farias
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Correspondence to Andrey Chaves.

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Chaves, A., da Costa e Silva, J., de King Freire, J.A. et al. Influence of graded interfaces on the exciton energy of type-I and type-II Si/Si1-x Gex quantum wires. J Mater Sci 42, 2314–2317 (2007). https://doi.org/10.1007/s10853-006-0617-3

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  • DOI: https://doi.org/10.1007/s10853-006-0617-3

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