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Oxidation-induced strengthening in ground silicon carbide

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Acknowledgment

We acknowledge the Ministry of Science and Technology of Korea for financial support through National Research Laboratory Program and Center for Nanostructured Materials Technology.

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Authors and Affiliations

  1. Division of Chemical Metrology and Materials Evaluation, Korea Research Institute of Standard and Science, 1 Doryong-dong, Yuseong, Deajeon, 305-600, Korea

    M. C. Chu, S. J. Cho, G. J. Yoon & H. M. Park

  2. Laboratory for Advanced Ceramic, Department of Materials and Metallurgical Engineering, Indian Institute of Technology, Kanpur, India

    D. Sarkar & B. Basu

Authors
  1. M. C. Chu
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  2. S. J. Cho
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  3. D. Sarkar
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  4. B. Basu
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  5. G. J. Yoon
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  6. H. M. Park
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Correspondence to M. C. Chu.

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Chu, M.C., Cho, S.J., Sarkar, D. et al. Oxidation-induced strengthening in ground silicon carbide. J Mater Sci 41, 4978–4980 (2006). https://doi.org/10.1007/s10853-006-0139-z

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  • DOI: https://doi.org/10.1007/s10853-006-0139-z

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