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Dynamics of STO heteroepitaxial growth by pulsed laser deposition

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Abstract

The heteroepitaxial growth dynamics of STO thin films on (100) LaAlO3 substrate by pulsed laser deposition has been studied. The laser energy density was found to be an important factor to determine the growth mechanics. High laser energy density is benefit to two dimensional layer-by-layer growth. Island growth prevails at low substrate temperature. STO thin films deposited at low oxygen partial pressure showed pellicular square grains. High oxygen partial pressure resulted in spherical STO grains. Step-terrace on substrate surface acts as a preferential nucleation site for adatoms, which leads to step-flow growth. STO thin films with atomic flat surface has been prepared on step-terraced substrate.

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Authors and Affiliations

  1. Institute of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China, Chengdu, 610054, People's Republic of China

    X. Z. Liu, S. M. He, D. H. Li, Q. F. Lu, Z. H. Wang, S. X. Bao & Y. R. Li

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  1. X. Z. Liu
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  2. S. M. He
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  3. D. H. Li
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  4. Q. F. Lu
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  5. Z. H. Wang
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  6. S. X. Bao
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  7. Y. R. Li
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Correspondence to X. Z. Liu.

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Liu, X.Z., He, S.M., Li, D.H. et al. Dynamics of STO heteroepitaxial growth by pulsed laser deposition. J Mater Sci 40, 5139–5145 (2005). https://doi.org/10.1007/s10853-005-4403-4

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  • DOI: https://doi.org/10.1007/s10853-005-4403-4

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