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Effect of solidification cooling rate and phosphorus inoculation on number per unit volume of primary silicon particles in hypereutectic aluminium—silicon alloys

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Abstract

Collected data on derived number per unit volume \(\bar N_V\) of primary silicon particles in hypereutectic Al-Si alloys show a power relationship with solidification cooling rate \(\dot T\) of the form \(\bar N_V=A\dot T^n\) where typically \(n \sim 1\) and \(A \simeq 130\) mm-3 (K/s)-1 in the absence of phosphorus and \(A \simeq 720\) mm-3 (K/s)-1 in its prescence. Significantly lower apparent values of \(\bar N_V\) from one set of results appear to stem from measurement of a mean long dimension rather than diameter of particle sections as well as lower measured undercoolings than in Bridgman experiments at similar \(\dot T\).

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Faraji, M., Todd, I. & Jones, H. Effect of solidification cooling rate and phosphorus inoculation on number per unit volume of primary silicon particles in hypereutectic aluminium—silicon alloys. J Mater Sci 40, 6363–6365 (2005). https://doi.org/10.1007/s10853-005-3103-4

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  • DOI: https://doi.org/10.1007/s10853-005-3103-4

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