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Investigation of the size effect on optical properties of polycrystalline Ge deposition by pulse laser deposition

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Abstract

The size effect of optical properties of the polycrystalline Ge/Si films prepared by pulse laser deposition (PLD) is investigated by photoluminescence (PL) and photocurrent (PC) spectra. The size of Ge nanocrystals is precisely controlled by the pulsed deposition time and then observed by the atomic force microscopy (AFM). The average size of Ge nanocrystals is about 2, 5 and 25 nm for 1, 2 and 3 min deposited sample, respectively. The size effect on optical properties of Ge nanocrystals has been analyzed by photoluminescence (PL) and photocurrent (PC) spectra. The PL peaks shift from 0.799 eV for 1 min to 0.762 eV for 3 mins; at the same time, the photocurrent peaks of the films sharply changes from 0.781 eV to 0.749 eV, the shifts of PL and PC are contributed to the quantum size effect of Ge nanocrystals.

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Authors and Affiliations

  1. Institute of Optoelectronic Materials, Department of Physics, Shaoxing College of Arts and Sciences, Shaoxing, 312000, Zhejiang Province, People's Republic of China

    Xiying Ma & Weilin Shi

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  1. Xiying Ma
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  2. Weilin Shi
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Correspondence to Xiying Ma.

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Ma, X., Shi, W. Investigation of the size effect on optical properties of polycrystalline Ge deposition by pulse laser deposition. J Mater Sci 41, 1025–1028 (2006). https://doi.org/10.1007/s10853-005-2035-3

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  • DOI: https://doi.org/10.1007/s10853-005-2035-3

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