Abstract
The p-type (Bi0.25Sb0.75)2Te3 ingot doped with 8 wt% excess Te alone and the n-type Bi2 (Te0.94Se0.06)3 ingot codoped with 0.068 wt% I and 0.017 wt% Te were grown by the Bridgman method and annealed at 673 K for 5 h in a hydrogen stream. The electrical resistivity ρ, Seebeck coefficient α and thermal conductivity κ before and after annealing were measured at 298 K, so that the annealing degraded significantly ZT of the p-type specimen but enhanced remarkably that of the n-type one. The temperature dependences of ρ, α and κ of the as-grown p-type and annealed n-type specimens with higher ZT were investigated in the temperature range from 200 to 360 K. As a result, ZT values of the as-grown p-type and annealed n-type specimens have a broad peak and reached great values of 1.19 and 1.13 at approximately 320 K, respectively. The present materials were thus found to be far superior to any other bismuth-telluride compound in the thermal stability of energy conversion efficiency in addition to the high performance.
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References
H. J. GOLDSMID, “Thermoelectric Refrigeration” (Plenum, NewYork, 1964).
K. SMIROUS and L. STOURAC, Z. Naturforsch. 14a (1959) 848.
F. D. ROSI, E. F. HOCKINGS and N. E. LINDENBLAD, RCA Rev. 22 (1961) 82.
W. M. YIM and F. D. ROSI, Solid State Electron. 15 (1972) 1121.
M. H. ETTENBERG, W. A. JESSER and E. D. ROSI, in Proceedings of the 15th International Conference on Thermoelectrics (Piscataway, NJ, 1996) p 52.
O. YAMASHITA and S. TOMIYOSHI, Jpn. J. Appl. Phys. 42 (2003) 492.
O. YAMASHITA, S. TOMIYOSI and K. MAKITA, J. Appl. Phys. 93 (2003) 368.
H. P. HA, Y. W. CHO, J. Y. BYUN and J. D. SHIM, in Proceedings of the 12th International Conference on Thermoelectrics (Yokohama, Japan, 1993) p. 105.
L. D. IVANOVA, YU. V. GRANATKINA, N. V. POLIKARPOVA and E. I. SMIRNOVA, Inorg. Mater. 33 (1997) 558.
J. YANG, T. AIZAWA, A. YAMAMOTO and T. OHTA, J. Alloys Comp. 309 (2000) 225.
D.-B. HYUN, J.-S. HWANG, J.-D. SHIM and T. S. OH, J. Mater. Sci. 36 (2001) 1285.
H. KAIBE, M. SAKATA, Y. ISODA and I. NISHIDA, J. Jpn. Inst. Metals 53 (1989) 958.
N. K. S. GAUR, C. M. BHANDARI and G. S. VERNMA, Phys. Rev. 144 (1966) 628.
O. YAMASHITA and S. TOMIYOSHI, J. Appl. Phys. 95 (2004) 161.
H. KH. ABRIKOSOV and L. D. IVANOVA, Inorg. Mater. 18 (1982) 471.
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Yamashita, O., Sugihara, S. High-performance bismuth-telluride compounds with highly stable thermoelectric figure of merit. J Mater Sci 40, 6439–6444 (2005). https://doi.org/10.1007/s10853-005-1712-6
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DOI: https://doi.org/10.1007/s10853-005-1712-6