The growth and electrical transport properties of self-organized metal/oxide nanostructures formed by anodizing Ta-Al thin-film bilayers

Abstract

Anodizing of Ta-Al metal bilayers (Al on Ta) sputter-deposited onto SiO₂ substrates was performed in oxalic acid electrolytes at anode potentials of 53 to 21.5 V in order to form nanoporous alumina layers and sequentially oxidize the tantalum underlayers through the alumina pores. The films formed consist of arrays of tantalum oxide nanohillocks percolating through the residual tantalum layer down to the substrate, so that a self-organized network of tantalum nanowires forms between the substrate and the alumina film. The average width (25–<10 nm), length (70–35 nm), and population density (10⁹–10¹¹ cm^-2) of the nanowires are systematically defined by the initial tantalum thickness (8–22 nm) and the anodizing conditions. The mesh-like, nano-sized morphologies of the tantalum underlayers result in a remarkably wide range of potential-dependent, controlled electrical sheet resistances (10²–10⁷ _Ω/sq). The periodical, tunable, metal/insulator film structure, allowing an increased transition to hopping or tunneling conduction at elevated temperature, leads to negative temperature coefficients of resistance, ranging 300 to 5 ppm/K. Oscillations of the potential-dependent dc conductance registered in the films at room temperature are attributed to the quantum-size effects in the metal/oxide nanostructures. The films are of technological importance for fabrication of thin-film, planar, adjustable resistors with significantly improved performances.