Measurement of Nonlinear Dielectric Behaviour of Semiconductor Material Under Microwave Field in Dual-Mode Rectangular Cavity



In this letter, a microwave cavity for investigating the effect of external microwave fields on the dielectric behavior of semiconductor material is proposed. We use a dual-mode rectangular cavity where the stimulus and test signals are supplied by two different swept frequency microwave sources. By adjusting the power level of the stimulus signal, the intensity of microwave field in the cavity is changed. Two band-stop filters are introduced to isolate the signals coming from the stimulus signal. Measurement results show that the dielectric properties of indium phosphate manifest nonlinear behavior under the electronic field intensity of \(10^{5}\)V/m. From the experimental result and theoretical analysis, we conclude that the nonlinear behavior is caused by the material’s inherent characteristics.


Measurement Dielectric Nonlinear behavior Microwave field Cavity 



The authors acknowledge the support from the National Natural Science Foundation of China (Grant Nos. 61671123 and 61001027) and the Open Foundation of National Engineering Research Center of Electromagnetic Radiation Control Materials (ZYGX2016K003-7).


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Authors and Affiliations

  1. 1.School of Electronic EngineeringUniversity of Electronic Science and Technology of ChinaChengduPeople’s Republic of China

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