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Epitaxial recrystallization and luminescence of CaAl2O4:Eu2+ thin films prepared on sapphire substrates

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Eu2+ doped CaAl2O4 thin films were prepared on c-, a-, and r-plane sapphire substrates by a sputtering method, and then post-annealed for the recrystallization. Post-annealed films have out-of-plane epitaxial orientations of (010) and (001) CaAl2O4 on c- and a-plane sapphire substrates, respectively, whereas the films on r-plane were composed of two epitaxial phases of (210) CaAl2O4 and (210) CaAl4O7. In-plane relationships between films and substrates were also determined by an X-ray pole figure method, demonstrating that the films were epitaxially recrystallized, but not single crystals. The emission wavelengths were independent of the orientations of epitaxial films, showing a blue emission at 448 nm under 325 nm excitation, but the emission intensity depended on the film structure.

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This work was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2010–0008994).

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Correspondence to Young Jin Kim.

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Kim, DH., Lee, C.K., Lee, J.S. et al. Epitaxial recrystallization and luminescence of CaAl2O4:Eu2+ thin films prepared on sapphire substrates. J Electroceram 30, 36–40 (2013).

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