Abstract
In this work processing of screen printed piezoelectric PZT thick films on silicon substrates is investigated for use in future MEMS devices. E-beam evaporated Al and Pt are patterned on PZT as a top electrode using a lift-off process with a line width down to 3 μm. Three test structures are used to investigate the optimal thickness of the top electrode, the degradation of the piezoelectric properties of the PZT film in absence of a diffusion barrier layer and finally how to fabricate electrical interconnects down the edge of the PZT thick film. The roughness of the PZT is found to have a strong influence on the conductance of the top electrode influencing the optimal top electrode thickness. A 100 nm thick top electrode on the PZT thick film with a surface roughness of 273 nm has a 4.5 times higher resistance compared to a similar wire on a planar SiO2 surface which has a surface roughness of less than 10 nm. It is found that the piezoelectric properties of the PZT thick film are degraded up to 1,000 μm away from a region of the PZT thick film that is exposed directly to the silicon substrate without a diffusion barrier layer. Finally, ferroelectric hysteresis loops are used to verify that the piezoelectric properties of the PZT thick film are unchanged after the processing of the top electrode.
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Hindrichsen, C.C., Pedersen, T., Kristiansen, P.T. et al. Investigation of top electrode for PZT thick films based MEMS sensors. J Electroceram 25, 150–158 (2010). https://doi.org/10.1007/s10832-010-9606-7
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DOI: https://doi.org/10.1007/s10832-010-9606-7