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The annealing effect on properties of ZnO thin film transistors with Ti/Pt source-drain contact

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Abstract

ZnO-based thin film transistors (TFTs) with Ti/Pt contacts were fabricated on SiO2/Si substrates. The as-deposited ZnO TFT did not work well as a TFT device but the annealed ZnO TFT showed acceptable characteristics with a mobility (μsat), threshold voltage (Vth), on/off ratio and subthreshold swing (SS) of 0.8 cm2/V.s, 2.5 V, over 106 and 0.84 V/dec, respectively. Complete oxygen loss was observed in ZnO after annealing at 300°C under a N2 atmosphere. The annealing process altered the crystallinity, density and composition of the ZnO active layers due to the formation of oxygen vacancies as shallow donors. This process is expected to play an important role in controlling the TFT performance of ZnO. In addition, it is expected to form the basis of the future electronic devices applications, such as transparent displays and active matrix organic lighting emitted displays (AMOLED).

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Acknowledgements

The present research was conducted by the research fund of Dankook University in 2009.

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  1. Department of Materials Science and Engineering, Dankook University, San#29, Anseo-dong, Cheonan-si, Chungnam, 330-714, Korea

    Jin-Seong Park

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  1. Jin-Seong Park
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Park, JS. The annealing effect on properties of ZnO thin film transistors with Ti/Pt source-drain contact. J Electroceram 25, 145–149 (2010). https://doi.org/10.1007/s10832-010-9605-8

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  • DOI: https://doi.org/10.1007/s10832-010-9605-8

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