Abstract
The electrical conductivity of BaPr1−x GdxO3−δ has been characterized by means of the four-point van der Pauw technique at 200–1100 °C as a function of pO2 and pH2O. The contributions from ionic charge carriers were investigated by the EMF of concentration cells and the H+/D+ isotope effect on the total conductivity. BaPr1−x Gd x O3−δ is predominately a p-type electronic conductor under oxidizing conditions, while ionic conduction is barely measurable. Gd(III) substituted for Pr(IV) is charge compensated mainly by electron holes, with protons and oxygen vacancies contributing significantly but as minority defects only at low temperatures (wet conditions) and at high temperatures, respectively. The conductivity behaviour has been modelled under these assumptions to extract thermodynamic parameters for the defect reactions at play. The practical use of this material is limited by its poor chemical stability.
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Acknowledgements
The authors wish to acknowledge Dr. Albert Tarancón (EME, University of Barcelona) for assistance to obtain part of the experimental data. This work has been supported through the BRD scholarship (University of Barcelona) and CeRMAE centre (Generalitat de Catalunya) for AM and by the Research Council of Norway, grant no. 15851/431 (Functional Oxides for Energy Technology, NANOMAT) for RH.
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Magrasó, A., Haugsrud, R., Segarra, M. et al. Defects and transport in Gd-doped BaPrO3 . J Electroceram 23, 80–88 (2009). https://doi.org/10.1007/s10832-008-9541-z
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DOI: https://doi.org/10.1007/s10832-008-9541-z