Abstract
We report on the fabrication of low-voltage ZnO thin-film transistors using 1% Ni-doped Ba0.6Sr0.4TiO3 as the gate insulator. The Ni-doped BST, deposited by RF magnetron sputtering at room temperature, significantly reduced leakage current density to less than 6 × 10−9 A/cm, as compared to a current density of 5 × 10−4 A/cm for undoped BST films at 0.5 MV/cm. The ZnO thin-film transistor with the Ni-doped BST gate insulator exhibited a very low operating voltage of 4 V. The field-effect mobility, the current on/off ratio and subthreshold swing were 2.2 cm2 V/s, 1.2 × 106, and 0.21 V/dec respectively.
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Acknowledgement
We gratefully acknowledge support from KIST Program under Grant No. 2E20792 and Seoul R&BD program under Grant No. 2G07270. This research was supported by the grant (F0004111) from the Information Display R&D Center, one of the 21st Century Frontier R&D Program funded by the Ministry of Knowledge Economy of the Korean Government.
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Kim, YB., Kim, JU., Choi, DK. et al. Electrically stable low voltage operating ZnO thin film transistors with low leakage current Ni-doped Ba0.6Sr0.4TiO3 gate insulator. J Electroceram 23, 76–79 (2009). https://doi.org/10.1007/s10832-008-9538-7
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DOI: https://doi.org/10.1007/s10832-008-9538-7