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Effect of uniform and periodic doping by Ce on the properties of barium strontium titanate thin films

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Abstract

A significant decrease in the dielectric loss and leakage current by introducing Ce in small amounts into BST thin films is demonstrated. The other effects of Ce doping are a lowering of the dielectric constant and a lower temperature coefficient of dielectric constant. In films containing a periodic fluctuation of Ce concentration through the thickness, prepared using a multilayer approach, the dielectric loss is further reduced. The periodicity of the composition is shown to have a significant effect on the properties. The properties of the multilayer films are seen to be significantly different from the single layer films of corresponding average composition.

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Acknowledgements

Support, in part, by the Government of India through grant Nos. ERIP/ER/0300199/M01 and DST/INT/US (NSF-RP052)/2000 and by NSF through NSF-DMR-305588 is greatly acknowledged.

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Authors and Affiliations

  1. Materials Science Program, Indian Institute of Technology, Kanpur, 208016, India

    Swaraj Basu, Ankur Verma, D. C. Agrawal & Y. N. Mohapatra

  2. Department of Physics, University of Puerto Rico, San Juan, PR, 00931-3343, USA

    Ram S. Katiyar

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  1. Swaraj Basu
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  2. Ankur Verma
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  3. D. C. Agrawal
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  4. Y. N. Mohapatra
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  5. Ram S. Katiyar
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Correspondence to D. C. Agrawal.

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Basu, S., Verma, A., Agrawal, D.C. et al. Effect of uniform and periodic doping by Ce on the properties of barium strontium titanate thin films. J Electroceram 19, 229–236 (2007). https://doi.org/10.1007/s10832-007-9336-7

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  • DOI: https://doi.org/10.1007/s10832-007-9336-7

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