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Structural and dielectric properties of epitaxial Ba0.6Sr0.4TiO3 thin films grown on Si substrates with thin SrO buffer layers

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Abstract

(100) epitaxial Ba0.6Sr0.4TiO3 (BST) thin films were grown on Si substrates using a 9 nm thick SrO buffer layer. The phase shifter fabricated on BST films grown on a SrO buffered Si substrate showed a larger figure of merit (FOM) of 24.7°/dB as a result of improving the phase tuning while retaining an appropriate insertion loss compared to that (15.3°/dB) for the BST/MgO structure. This work demonstrates that a thin SrO buffer layer plays an important role in the successful integration of BST-based microwave tunable devices onto Si wafers.

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Acknowledgement

This work was supported by KIST independent project of one of the authors (I.D.K.)

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Authors and Affiliations

  1. Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA

    Hyun-Suk Kim

  2. Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon, 305-701, Republic of Korea

    Tae-Seon Hyun & Ho-Gi Kim

  3. RFIC Research and Education Center, Kwangwoon University, 447-1 Wolgye-dong, Nowon-gu, Seoul, 139-703, Republic of Korea

    Tae-Soon Yun & Jong-Chul Lee

  4. Optoelectronic Materials Research Center, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul, 130-650, Republic of Korea

    Il-Doo Kim

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  1. Hyun-Suk Kim
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  2. Tae-Seon Hyun
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Correspondence to Il-Doo Kim.

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Kim, HS., Hyun, TS., Kim, HG. et al. Structural and dielectric properties of epitaxial Ba0.6Sr0.4TiO3 thin films grown on Si substrates with thin SrO buffer layers. J Electroceram 18, 305–309 (2007). https://doi.org/10.1007/s10832-007-9167-6

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  • DOI: https://doi.org/10.1007/s10832-007-9167-6

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