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Microwave dielectric loss of thermally stressed MgTiO3 via TEM observation

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Abstract

The influence of cooling rate on the dielectric loss of MgTiO3 ceramics at microwave frequencies via thermal stress and TEM was investigated. The specimens were cooled down with 1, 5, 30 °C/min and air-quenching from the sintering temperature of 1,350 °C. As the cooling rate increased, Q·f value decreased due to an increase of the crystallographic strain. The line defects such as dislocations increased with an increase of cooling rate except the specimen cooled down at 1 °C/min, which showed no dislocation. This result revealed that the line defects contribute to the deterioration of dielectric losses.

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Authors and Affiliations

  1. Department of Technology Diffusion, Korea Institute of Science & Technology Information, Seoul, 130-742, South Korea

    Sun-Hi Yoo

  2. Department of Ceramic Engineering, Yonsei University, Seoul, 120-749, South Korea

    Sun-Hi Yoo & Ki Hyun Yoon

  3. Thin Film Materials Research Center, Korea Institute of Science and Technology, Seoul, 130-650, South Korea

    Ji-Won Choi

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  1. Sun-Hi Yoo
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  2. Ki Hyun Yoon
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  3. Ji-Won Choi
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Correspondence to Ki Hyun Yoon.

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Yoo, SH., Yoon, K.H. & Choi, JW. Microwave dielectric loss of thermally stressed MgTiO3 via TEM observation. J Electroceram 21, 8–11 (2008). https://doi.org/10.1007/s10832-007-9073-y

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  • DOI: https://doi.org/10.1007/s10832-007-9073-y

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