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The investigation of key processing parameters in fabrication of Pb(Zr x Ti1−x )O3 thick films for MEMS applications

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Abstract

It has always been a big challenge to deposit dense and crack-free Pb(Zr x Ti1−x )O3 (PZT) thick films through Chemical Solution Deposition (CSD). In this study, a sol with higher concentration (≥0.6 M) was spun onto a platinised silicon substrate. The single layer thickness of a dense, crack-free film with several tenths of nanometres up to 350 nm could be obtained. It was found that the key factor in obtaining thick crack-free films was to choose an appropriate heating profile. In this study, the deflection of a single layer at various stages of heating was analysed through the measurement of the wafer curvature using the Dektak profilometer. As a result three characteristic changes of deflection were found, happening at 300, 450 and 500 °C. These obvious changes in wafer deflection closely relate to the transformations of sol-to-gel, gel-to-amorphous solid and amorphous solid-to-solid crystals. Furthermore, using these temperatures to thermally treat each single layer, it was possible to obtain thick crack-free films by repeatedly spin coating. The dielectric and piezoelectric properties, such as d33,f and e31,f, of the films with different thicknesses and orientations were measured and compared.

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Acknowledgement

The financial support of EPSRC through project GR/S45027/01 is gratefully acknowledged. The Authors would like to thank Miss C. Kimpton for the AFM images.

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  1. Department of Advanced Materials, Cranfield University, Beds, MK43 0AL, UK

    S. Corkovic, Q. Zhang & R. W. Whatmore

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  1. S. Corkovic
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  2. Q. Zhang
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  3. R. W. Whatmore
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Correspondence to S. Corkovic.

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Corkovic, S., Zhang, Q. & Whatmore, R.W. The investigation of key processing parameters in fabrication of Pb(Zr x Ti1−x )O3 thick films for MEMS applications. J Electroceram 19, 295–301 (2007). https://doi.org/10.1007/s10832-007-9038-1

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  • DOI: https://doi.org/10.1007/s10832-007-9038-1

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