Abstract
GaN crystals were nucleated and grown into various one-dimensional forms by the supersayuration of a source gas via non-catalytic routes. Chemical vapor deposition (CVD) was employed for the GaN growth using Ga metal and ammonia gas as sources. The formation of one-dimensional GaN naostructures including nano-columns, nano-cakes, nano-flowers, and nano-bundles was identified using scanning electron microscopy (SEM). X-ray diffraction (XRD) was performed to analyze crystallinity of each nanostructure. The growth mechanism of thick nano-columns was proposed as the epitaxial growth of GaN (002) hexagonal columns with {100} facets from the GaN thick films. The growth of nano-cakes was suggested as the (002) hexagonal plate formation with {100} facets at the first stage followed by the secondary (002) crystal growth from each plate. The growth mechanism of nano-flowers would be the formation of GaN seed particles first and the subsequent nucleation and growth of GaN (101) nanowires with several directions from the seeds. The growth of nano-bundles is the most interesting structure and the formation mechanism was proposed as the first formation of a GaN (002) nanowire and then subsequent nucleation and growth of GaN (002) and (10-1) nanocrystals at the surface of the primary GaN (002) nanowire.
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References
H. Morkoc, S. Strite, G.B. Gao, M.E. Lin, B. Sverdlov, and M. Burns, J. Appl. Phys., 76, 1363 (1994).
S. Nakamura, G. Fasol, and S. Pearton, The Blue Laser Diode (Springer-Verlag, Berlin, Heidelberg, New York, 1997), p. 1.
S. Nakamura, Science, 281, 956 (1998).
M.I. Nathan, Science, 277, 46 (1997).
S. Yamazaki, T. Yatsui, M. Ohtsu, T.W. Kim, and H. Fujioka, Appl. Phys. Lett., 85, 3059 (2004).
A. Krost, A. Dodgar, J. Blasing, A. Diez, T. Hempel, S. Petzold, J. Christen, and R. Clos, Appl. Phys. Lett., 85, 3441 (2004).
H.P. Liu, I.G. Chen, J.D. Tsay. W.Y. Liu, Y.D. Guo, and J.T. Hsu, J. Electroceram., 13, 839 (2004).
X.H. Chen, J. Xu, R.M. Wang, and D.P. Yu, Adv. Mater., 16, 952 (2004).
X.H. Chen, J. Xu, R.M. Wang, and D. Yu, Ibid., 15, 419 (2003).
H.M. Kim, T.W. Kang, and K.S. Chung, Ibid., 15, 567 (2003).
F. Qian, Y. Li, S. Gradecak, D.L. Wang, C.J. Barrelet, and C.M. Lieber, Nano Lett., 4, 1975 (2004).
T. Kuykendall, P. Pauzauskie, S.K. Lee, Y.F. Zhang, J. Goldberger, and P.D. Yang, Nano Lett., 3, 1063 (2003).
H.J. Choi, D.H. Kim, T.G. Kim, and Y.M. Sung, Chem. Phys. Lett., 413, 479 (2005).
Y. Cui, Q. Wei, H. Park, and C.M. Lieber, Science, 293, 1289 (2001).
M.S. Gudiksen, L.J. Lauhon, J. Wnag, D.C. Smith, and C.M. Lieber, Nature, 415, 617 (2002).
H.J. Choi, H.K Seong, J.C. Lee, and Y.M. Sung, J. Cryst. Growth, 269, 472 (2004).
Y. Xia, P. Yang, Y. Sun, Y. Wu, B. Mayers, B. Gates, Y. Yin, F. Kim, and H. Yan, Adv. Mater., 15, 353 (2003).
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Choi, HJ., Kim, DH., Kim, TG. et al. Various one-dimensional GaN nanostructures formed by non-catalytic routes. J Electroceram 17, 221–225 (2006). https://doi.org/10.1007/s10832-006-8564-6
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DOI: https://doi.org/10.1007/s10832-006-8564-6