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Microwave dielectric properties of temperature stable Ca5A2Ti1−x Hf x O12 (A = Nb, Ta) ceramics

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Abstract

Ca5A2Ti1−x Hf x O12 (A = Nb, Ta) ceramics have been prepared as single-phase materials by conventional solid-state ceramic route. Their structure and microstructure were studied by X-ray diffraction and scanning electron microscopic methods and dielectric properties were characterised in the 4–6 GHz microwave frequency range. We observed an increase in cell volume and theoretical density with compositional variations. In Ca5Nb2Ti1−x Hf x O12 ceramics the dielectric constant varied from 48 to 22 and quality factor from 26000 to 16000 GHz whereas in Ca5Ta2Ti1−x Hf x O12 the variation in dielectric constant was from 38 to 17 and quality factor from 33000 to 18000 GHz with increase in x. In both the ceramic systems the temperature coefficient of resonant frequency shifted from positive to negative values with Hf 4+ substitution for Ti4+.

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Author notes

  1. P. V. Bijumon

    Present address: Department of Electrical and Computer Engineering, Royal Military College of Canada, P.O. Box. 17000, Station Forces, Kingston, Ontario, K7K 1S8, Canada

Authors and Affiliations

  1. Ceramic Technology Division, Regional Research Laboratory, Trivandrum, 695 019, India

    P. V. Bijumon & M. T. Sebastian

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  1. P. V. Bijumon
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Bijumon, P.V., Sebastian, M.T. Microwave dielectric properties of temperature stable Ca5A2Ti1−x Hf x O12 (A = Nb, Ta) ceramics. J Electroceram 16, 239–245 (2006). https://doi.org/10.1007/s10832-006-8279-8

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  • DOI: https://doi.org/10.1007/s10832-006-8279-8

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