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Enhancement of the surface and structural properties of ZnO epitaxial films grown on Al2O3 substrates utilizing annealed ZnO buffer layers

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Abstract

ZnO films were grown on Al2O3 (1000) substrates without and with ZnO buffer layers by using radio-frequency magnetron sputtering. Atomic force microscopy images showed that the surface roughness of the ZnO films grown on ZnO buffer layers annealed in a vacuum was decreased, indicative of an improvement in the ZnO surfaces. X-ray diffraction patterns showed that the crystallinity of the ZnO thin films was enhanced by using the annealed ZnO buffer layer in comparison with the film grown on without a buffer layer. The improvement of the surface and structural properties of the ZnO films might be attributed to the formation of the Zn-face ZnO buffers due to annealing in a vacuum. These results indicate that the surface and structural properties of ZnO films grown on Al2O3 substrates are improved by using ZnO buffer layers annealed in a vacuum.

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Authors and Affiliations

  1. Thin Film Material Research Center, Korea Institute of Science and Technology, Seoul, 136-701, Korea

    Young Soo No, Oleg Kononenko, Yeon Sik Jung & Won Kook Choi

  2. Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, Seoul, 133-791, Korea

    Young Soo No & Tae Whan Kima

Authors
  1. Young Soo No
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  2. Oleg Kononenko
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  3. Yeon Sik Jung
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  4. Won Kook Choi
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  5. Tae Whan Kima
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Correspondence to Tae Whan Kima.

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No, Y.S., Kononenko, O., Jung, Y.S. et al. Enhancement of the surface and structural properties of ZnO epitaxial films grown on Al2O3 substrates utilizing annealed ZnO buffer layers. J Electroceram 17, 283–285 (2006). https://doi.org/10.1007/s10832-006-7064-z

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  • DOI: https://doi.org/10.1007/s10832-006-7064-z

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