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Characteristics of Bi4Ti3O12 thin films on ITO/glass and Pt/Si substrates prepared by R.F. sputtering and rapid thermal annealing

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Abstract

Bi4Ti3O12 thin films are deposited on ITO/glass and Pt/Ti/Si(100) substrates by R.F. magnetron sputtering at room temperature. The films are then heated by a rapid thermal annealing (RTA) process conducted in oxygen atmosphere at temperatures ranging from 550–700∘C. X-ray diffraction examination reveals that the crystalinity of the films grown on Pt/Ti/Si is better than that of the films grown on ITO/glass under the same fabrication conditions. SEM observation shows that the films grown on Pt/Ti/Si are denser than those grown on ITO/glass substrates. Interactive diffusion between the Bi4Ti3O12 film and the ITO film increases with the increase of annealing temperature. The optical transmittance of the thin film annealed at 650∘C is found to be almost 100% when the effect of the ITO film is excluded. The relative dielectric constants, leakage currents and polarization characteristics of the two films are compared and discussed.

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Authors and Affiliations

  1. Department of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung, 804, Taiwan, ROC

    Wei-Kuo Chia & Ying-Chung Chen

  2. Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung, 811, Taiwan, ROC

    Cheng-Fu Yang

  3. Department of Electrical Engineering, Hsiuping Institute of Technology, Taichung County, 412, Taiwan, ROC

    San-Lin Young

  4. Department of Electronic Engineering, Fortune Institute of Technology, Kaohsiung County, 842, Taiwan, ROC

    Wang-Ta Chiang & Yu-Tarng Tsai

Authors
  1. Wei-Kuo Chia
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  2. Ying-Chung Chen
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  3. Cheng-Fu Yang
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  4. San-Lin Young
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  5. Wang-Ta Chiang
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  6. Yu-Tarng Tsai
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Correspondence to Ying-Chung Chen.

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Chia, WK., Chen, YC., Yang, CF. et al. Characteristics of Bi4Ti3O12 thin films on ITO/glass and Pt/Si substrates prepared by R.F. sputtering and rapid thermal annealing. J Electroceram 17, 173–177 (2006). https://doi.org/10.1007/s10832-006-7063-0

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  • DOI: https://doi.org/10.1007/s10832-006-7063-0

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