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Doping level-dependent dry-etch damage in n-type GaN

  • 1. Informatics: Dielectrics, Ferroelectrics, and Piezoelectrics
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Abstract

The electrical effects of dry-etch on n-type GaN by an inductively coupled Cl2/CH4/H2/Ar plasma were investigated as a function of ion energy, by means of ohmic and Schottky metallization methods. The specific contact resistivity (ρc) of the ohmic contact was decreased, while the leakage current in the Schottky diode was increased with increasing ion energy due to the preferential sputtering of nitrogen. At a higher rf power, an additional effect of damage was found on the etched sample, which was sensitive to dopant concentration in terms of the ρc of the ohmic contact. This can be attributed to effects such as the formation of deep acceptors as well as the electron-enriched surface layer within the depletion layer. Furthermore, the thermal annealing process enhanced the ohmic and Schottky properties of the heavily damaged surface.

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Authors and Affiliations

  1. Department of Materials Science and Metallurgical Engineering, Sunchon National University, Sunchon, Chonnam, 540-742, Korea

    Ji-Myon Lee & Byung-Il Kim

  2. Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, Gwangju, 500-712

    Seong-Ju Park

Authors
  1. Ji-Myon Lee
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  2. Byung-Il Kim
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  3. Seong-Ju Park
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Correspondence to Ji-Myon Lee.

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Lee, JM., Kim, BI. & Park, SJ. Doping level-dependent dry-etch damage in n-type GaN. J Electroceram 17, 227–230 (2006). https://doi.org/10.1007/s10832-006-6990-0

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  • DOI: https://doi.org/10.1007/s10832-006-6990-0

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