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Device applications of transparent oxide semiconductors: Excitonic blue LED and transparent flexible TFT

  • 1. Informatics: Dielectrics, Ferroelectrics, and Piezoelectrics
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Abstract

Recent progress in oxide-based transparent optoelectronic devices is reviewed. It is important to understand electronic structures inherent to oxides in order to develop new materials and to find suitable device applications that oxide materials can have distinct advantages over conventional semiconductors. Two new transparent oxide semiconductors, (i) p-type layered oxychalcogenides LaCuOCh (Ch = chalcogen), and (ii) large-mobility amorphous oxide semiconductors (AOSs), are taken as examples. Their peculiar properties are discussed in comparison with conventional semiconductors based on consideration of electronic structures. Two associated devices, an excitonic light-emitting diode using LaCuOCh and transparent flexible thin film transistors using AOSs, are also shown.

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Authors and Affiliations

  1. Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama, 226-8503, Japan

    Toshio Kamiya & Hideo Hosono

  2. ERATO-SORST, Japan Science and Technology Agency, in Frontier Collaborative Research Center, Tokyo Institute of Technology, Yokohama, 226-8503, Japan

    Toshio Kamiya, Hidenori Hiramatsu, Kenji Nomura & Hideo Hosono

  3. Frontier Collaborative Research Center, Tokyo Institute of Technology, Yokohama, 226-8503, Japan

    Hideo Hosono

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  1. Toshio Kamiya
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  2. Hidenori Hiramatsu
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  3. Kenji Nomura
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  4. Hideo Hosono
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Correspondence to Toshio Kamiya.

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Kamiya, T., Hiramatsu, H., Nomura, K. et al. Device applications of transparent oxide semiconductors: Excitonic blue LED and transparent flexible TFT. J Electroceram 17, 267–275 (2006). https://doi.org/10.1007/s10832-006-6710-9

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  • DOI: https://doi.org/10.1007/s10832-006-6710-9

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