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Effect of vanadium doping on ferroelectric and electrical properties of Bi3.25La0.75Ti3O12 thin film

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Abstract

Bi3.25La0.75Ti3O12 (BLT) and V-doped BLT (BLTV) thin films were prepared on Pt/Ti/SiO2/Si substrates by a pulsed laser deposition method. The effects of V doping on ferroelectric and electrical properties were investigated by polarization-electric field hysteresis loops and leakage current-voltage measurements. BLTV single phases were confirmed by X-ray diffraction. Remnant polarization was increased and the leakage current density was decreased by V doping. The leakage current density of BLT thin films suddenly increased at 100 kV/cm while that of BLTV thin films increased at the higher electric field of 160 kV/cm. The power law relationship J α E n of current density vs. applied electric field is estimated to be J αE 2.0 for BLT and J αE 1.0 for BLTV thin films. The leakage current of the BLT/Pt junction can be explained by space-charge-limited current. However, that of the BLTV/Pt junction was characterized by the Schottky emission behavior.

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Authors and Affiliations

  1. Research Center for Dielectric and Advanced Matter Physics, Pusan National University, Busan, 609-735, Korea

    Jin Soo Kim

  2. Department of Physics, University of Ulsan, Ulsan, 680-749, Korea

    Hai Joon Lee & Ill Won Kim

  3. Department of Physics, Dongeui University, Busan, 614-714, Korea

    Byung Moon Jin

Authors
  1. Jin Soo Kim
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  2. Hai Joon Lee
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  3. Ill Won Kim
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Correspondence to Jin Soo Kim.

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Kim, J.S., Lee, H.J., Kim, I.W. et al. Effect of vanadium doping on ferroelectric and electrical properties of Bi3.25La0.75Ti3O12 thin film. J Electroceram 16, 207–211 (2006). https://doi.org/10.1007/s10832-006-6359-4

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  • DOI: https://doi.org/10.1007/s10832-006-6359-4

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