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Growth mode in strained ZnO films on Al2O3(0001) during sputtering

  • 1. Informatics: Dielectrics, Ferroelectrics, and Piezoelectrics
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Abstract

We investigated the temperature dependence of growth mode in highly mismatched sputter-grown ZnO/Al2O3(0001) heteroepitaxial films using real-time synchrotron X-ray scattering. We find that the growth mode changes from 2 dimensional (2D) layer to 3D island in early growth stage with temperature (300∘C–500∘C). At around 400∘C, however, intermediate 2D platelets nucleate in early stage, act as nucleation cores of 3D islands and transform to misaligned state during further growth. The results of the strain evolution during growth suggest that the surface diffusion is a major factor in determining the growth mode in the strained ZnO/Al2O3(0001) heteroepitaxy.

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Authors and Affiliations

  1. Biomedical Imaging Center, I-BIO Program and Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, 790-784, Korea

    I. W. Kim, H. S. Kim, S. J. Doh & J. H. Je

  2. Department of Materials Science and Engineering, Sangju National University, Sangju, 742-711, Korea

    T. S. Cho

Authors
  1. I. W. Kim
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  2. H. S. Kim
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  3. S. J. Doh
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  4. J. H. Je
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  5. T. S. Cho
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Correspondence to J. H. Je.

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Kim, I.W., Kim, H.S., Doh, S.J. et al. Growth mode in strained ZnO films on Al2O3(0001) during sputtering. J Electroceram 17, 327–330 (2006). https://doi.org/10.1007/s10832-006-6288-2

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  • DOI: https://doi.org/10.1007/s10832-006-6288-2

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