Abstract
Semiconductors with mobile donors and acceptors are mixed-ionic-electronic-conductors, MIECs, which exhibit peculiar electronic (electron/hole), I e , current-voltage relations. This is a result of the redistribution of the ions under the applied electrical potential. MIECs are usually ionic materials which exhibit relative low electron/hole mobilities as compared to the materials used in the semiconductor industry. However, thin layers of MIECs exhibit a low resistance and fast response and become of increasing interest.
The I e −V relations are discussed for a few typical examples. It is shown that they depend on the energy band gap as when it is large, the semiconductor is either p-type or n-type. The I e −V relations depend also on the nature of the electrodes, whether blocking for ion exchange or not. Experimental results for Cu2O are presented and analyzed using one of the models discussed.
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ICE-2005, KIST, Seoul, Korea, (Invited)
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Riess, I. I−V relations in semiconductors with ionic motion. J Electroceram 17, 247–253 (2006). https://doi.org/10.1007/s10832-006-5548-5
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DOI: https://doi.org/10.1007/s10832-006-5548-5