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The electronic structures for the optical absorption of Hf-O-N thin films

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Abstract

The local structures of Hf-O-N thin films were analyzed using an extended X-ray absorption fine structure (EXAFS) study on Hf L III-edge and first-principles calculations. Depending on their composition and atomic configurations, Hf4O8 (CN: 7.0), Hf4O5N2 (CN: 6.25) and Hf4O2N4(CN: 5.5) were suggested as the local structures of Hf-O-N thin films. The optical band gaps of Hf-O-N thin films were compared with the calculated band gap. And to investigate the optical absorption, the effects of film compositions on the valence bands of Hf-O-N thin films were analyzed by comparing the experimental valence band with the valence band.

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Authors and Affiliations

  1. SAMSUNG ELECTRONICS, Semiconductor Business, San #24 Nongseo-Dong, Giheung-Gu, Yongin-City, Gyeonggi-Do, Korea, 446-711

    Sung Kwan Kim & Jongwan Choi

  2. Sunchon Branch, Korea Basic Science Institute, 315 Maegok, Sunchon, Jeonnam, 540-742, Korea

    Yang-Soo Kim

  3. Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon, 305-701, Korea

    Young-Ah Jeon & Kwang-Soo No

Authors
  1. Sung Kwan Kim
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  2. Yang-Soo Kim
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  3. Young-Ah Jeon
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  4. Jongwan Choi
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  5. Kwang-Soo No
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Correspondence to Sung Kwan Kim.

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Kim, S.K., Kim, YS., Jeon, YA. et al. The electronic structures for the optical absorption of Hf-O-N thin films. J Electroceram 17, 197–203 (2006). https://doi.org/10.1007/s10832-006-0469-x

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  • DOI: https://doi.org/10.1007/s10832-006-0469-x

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