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Three-dimensional quantum-corrected Monte Carlo device simulator of n-FinFETs

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Abstract

The effective potential approach was successfully incorporated as a quantum correction to a Monte Carlo device simulator of n-FinFETs to take into account the electron quantum confinement. The electron line density calculated by the effective potential approach agrees very well with the one calculated by a 2D Schrödinger–Poisson solver. Next, the results for the drain current as a function of the gate and drain voltage obtained by the semiclassical and by the quantum-corrected Monte Carlo device simulator were compared. The quantum-corrected Monte Carlo device simulator properly models volume inversion, which reduces the impact of surface roughness scattering, thus improving the electron drift velocity. Additionally, the quantum correction allows the modeling of the reduction of electron density in the n-FinFETs channel due to the quantum-mechanical size quantization effect. This, in turn, leads to a reduction of the drain current.

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The datasets generated during and/or analyzed during the current study are available from the corresponding author on reasonable request.

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Funding

This work was supported by CNPq, Conselho Nacional de Desenvolvimento Científico e Tecnológico—Brasil, and it was financed in part by the Coordenação de Aperfeiçoamento de Pessoal de Nível Superior—Brasil (CAPES)—Finance Code 001.

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Authors and Affiliations

  1. Programa de Pós-Graduação em Microeletrônica, Universidade Federal do Rio Grande do Sul, Porto Alegre, RS, 91501-970, Brazil

    C. S. Soares & G. I. Wirth

  2. Silvaco, Porto Alegre, RS, 90110-180, Brazil

    G. F. Furtado

  3. Centro de Desenvolvimento Tecnológico, Universidade Federal de Pelotas, Pelotas, RS, 96010-610, Brazil

    A. C. J. Rossetto

  4. School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ, 85287-5706, USA

    D. Vasileska

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  1. C. S. Soares
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  3. A. C. J. Rossetto
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  4. G. I. Wirth
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  5. D. Vasileska
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All authors whose names appear on the submission 1) made substantial contributions to the conception or design of the work; or the acquisition, analysis, or interpretation of data; or the creation of new software used in the work; 2) drafted the work or revised it critically for important intellectual content; 3) approved the version to be published; and 4) agree to be accountable for all aspects of the work in ensuring that questions related to the accuracy or integrity of any part of the work are appropriately investigated and resolved.

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Correspondence to C. S. Soares.

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Soares, C.S., Furtado, G.F., Rossetto, A.C.J. et al. Three-dimensional quantum-corrected Monte Carlo device simulator of n-FinFETs. J Comput Electron (2024). https://doi.org/10.1007/s10825-024-02145-w

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