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Analog performance and linearity analysis of a p-type group IV-IV SiGe TFET

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Abstract

This work investigates a dual-material gate p-channel tunnel field-effect transistor (p-DMG-TFET) with a Si/SiGe heterojunction for achieving better performance in radio frequency (RF) applications. The results of the simulation demonstrate an improved on-current/off-current ratio (Ion/Ioff ~ 109) and minimum subthreshold swing (19 mV/decade) for the proposed Si0.7Ge0.3 hetero-TFET versus Si used as channel material. A comprehensive simulation study of both Si0.7Ge0.3 and Si channel devices is performed, and on the basis of their DC, analog/RF, and linearity performance, a direct comparison reveals improved results for digital and analog applications. Numerous characteristics of the proposed DMG-HJ-TFET, including IDS, CGS, CGD, gm, gds, fT, TGF, TFP, GFP, and GTFP, are investigated and compared with a Si channel device, in which the proposed device shows better performance for RF circuitry applications. RF figures of merit (FOMs) including gm2, gm3, VIP2, VIP3, 1-dB compression point, IIP3, and IMD3 are also investigated for the proposed structure, which again demonstrates better performance.

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Data availability

The data that support the findings of this study are available from the corresponding author upon reasonable request. Code availability: not applicable.

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Acknowledgements

We would like to express our gratitude to the School of Electronics Engineering, KIIT Deemed to be a university for accommodating us with the required arrangements for our work.

Funding

The authors extend their appreciation to the Deputyship for Research & Innovation, Ministry of Education in Saudi Arabia, for funding this research (IFKSURC-1-2308).

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Authors and Affiliations

  1. School of Electronics Engineering, KIIT University, Bhubaneswar, Odisha, 751024, India

    Sadhana Subhadarshini Mohanty, Pradipta Dutta, Jitendra Kumar Das & Sushanta Kumar Mohapatra

  2. Biological and Environmental Sensing Research Unit, King Abdullah Institute for Nanotechnology, King Saud University, P.O. Box 2455, 11451, Riyadh, Saudi Arabia

    Shofiur Rahman

  3. Research Chair for Tribology, Surface, and Interface Sciences, Department of Physics and Astronomy, College of Science, King Saud University, 11451, Riyadh, Saudi Arabia

    Reem Alanazi, Nadyah Alanazi & Abdullah N. Alodhayb

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  1. Sadhana Subhadarshini Mohanty
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  2. Pradipta Dutta
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  3. Jitendra Kumar Das
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  4. Sushanta Kumar Mohapatra
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  5. Shofiur Rahman
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Contributions

All authors contributed to the study conception and design. Data collection and analysis were performed by SM, PD, and JD. The first draft of the manuscript was written by SM, and all authors commented on the manuscript. All authors read and approved the final manuscript and agreed on the order of appearance of the authors.

Corresponding authors

Correspondence to Sushanta Kumar Mohapatra or Abdullah N. Alodhayb.

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Mohanty, S.S., Dutta, P., Das, J.K. et al. Analog performance and linearity analysis of a p-type group IV-IV SiGe TFET. J Comput Electron (2024). https://doi.org/10.1007/s10825-024-02141-0

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